Fundamentals and Recent Advances in Epitaxial Graphene on SiC
Material type:
ArticleLanguage: English Publication details: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021Description: 1 electronic resource (94 p.)ISBN: - books978-3-0365-1178-8
- 9783036511795
- 9783036511788
- Technology: general issues
- epitaxial graphene
- copper
- redox reaction
- electrodeposition
- voltammetry
- chronoamperometry
- DFT
- silicon carbide
- Raman spectroscopy
- 2D peak line shape
- G peak
- charge density
- strain
- atomic layer deposition
- high-k insulators
- ion implantation
- Raman
- AFM
- XPS
- graphene
- SiC
- 3C-SiC on Si
- substrate interaction
- carrier concentration
- mobility
- intercalation
- buffer layer
- surface functionalization
- twistronics
- twisted bilayer graphene
- flat band
- epitaxial graphene on SiC
- quasi-free-standing graphene
- monolayer graphene
- high-temperature sublimation
- terahertz optical Hall effect
- free charge carrier properties
- sublimation
- electronic properties
- material engineering
- deposition
| Item type | Home library | Collection | Call number | Materials specified | Status | Date due | Barcode | |
|---|---|---|---|---|---|---|---|---|
Electronic-Books
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OPJGU Sonepat- Campus | E-Books Open Access | Available |
Open Access star Unrestricted online access
This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.
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