MARC details
000 -LEADER |
fixed length control field |
06258cam a2200613 i 4500 |
001 - CONTROL NUMBER |
control field |
on1125114486 |
003 - CONTROL NUMBER IDENTIFIER |
control field |
OCoLC |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20220712093907.0 |
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS--GENERAL INFORMATION |
fixed length control field |
m o d |
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
fixed length control field |
cr cnu---unuuu |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
191130s2019 dk ob 001 0 eng d |
040 ## - CATALOGING SOURCE |
Original cataloging agency |
EBLCP |
Language of cataloging |
eng |
Description conventions |
rda |
-- |
pn |
Transcribing agency |
EBLCP |
Modifying agency |
OCLCQ |
-- |
N$T |
-- |
YDXIT |
-- |
OCLCF |
-- |
OCLCQ |
-- |
OCLCA |
-- |
ESU |
-- |
OCLCQ |
-- |
OCLCO |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9788770220590 |
Qualifying information |
(electronic book) |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
877022059X |
Qualifying information |
(electronic book) |
029 1# - (OCLC) |
OCLC library identifier |
AU@ |
System control number |
000068482555 |
035 ## - SYSTEM CONTROL NUMBER |
System control number |
(OCoLC)1125114486 |
050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
Classification number |
TK7875 |
Item number |
.M39 2019 |
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
Classification number |
621.381 |
Edition number |
23 |
049 ## - LOCAL HOLDINGS (OCLC) |
Holding library |
MAIN |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Mazumder, Pinaki, |
Relator term |
author. |
9 (RLIN) |
836999 |
245 10 - TITLE STATEMENT |
Title |
Neuromorphic circuits for nanoscale devices / |
Statement of responsibility, etc |
Pinaki Mazumder, Yalcin Yilmaz, Idongesit Ebong, Woo Hyung Lee. |
264 #1 - |
-- |
Gistrup, Denmark : |
-- |
River Publishers, |
-- |
[2019] |
300 ## - PHYSICAL DESCRIPTION |
Extent |
1 online resource |
336 ## - |
-- |
text |
-- |
txt |
-- |
rdacontent |
337 ## - |
-- |
computer |
-- |
c |
-- |
rdamedia |
338 ## - |
-- |
online resource |
-- |
cr |
-- |
rdacarrier |
490 1# - SERIES STATEMENT |
Series statement |
River Publishers series in biomedical engineering |
504 ## - BIBLIOGRAPHY, ETC. NOTE |
Bibliography, etc |
Includes bibliographical references and index. |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
Front Cover; Half Title; Series Page -- RIVER PUBLISHERS SERIES IN BIOMEDICAL ENGINEERING; Title Page; Copyright Page; Contents; Preface; Acknowledgement; List of Contributors; List of Figures; List of Tables; List of Abbreviations; Chapter 1 -- Introduction; 1.1 Discovery; 1.2 The Missing Memristor; 1.2.1 Definitions; 1.2.2 DC Response of an Ideal Memristor; 1.2.3 AC Response of an Ideal Memristor; 1.2.4 AC Response of an Ideal Memristor: Higher Frequencies; 1.2.5 Some Further Observations; 1.2.5.1 Requirement 1: Nonlinearity; 1.2.5.2 Requirement 2: Continuous ' v. q |
505 8# - FORMATTED CONTENTS NOTE |
Formatted contents note |
1.2.5.3 Requirement 3: Strictly monotonically increasing ' v. q1.2.6 Summary; 1.3 Memristive Devices and Systems; 1.3.1 Definitions; 1.3.2 Resistive Switching Mechanisms; 1.3.3 Transport of Mobile Ions; 1.3.4 Formation of Conduction Filaments; 1.3.5 Phase Change Transitions; 1.3.6 Resonant Tunneling Diodes; 1.3.7 Magnetoresistive Memory, Nanoparticles and Multi-State Devices; 1.3.7.1 Spin-transfer torque; 1.3.7.2 Nanoparticles; 1.3.7.3 Multi-state memories; 1.4 Neuromorphic Computing; 1.4.1 Memristive Synapse; 1.4.2 Memristive Neuron; 1.4.3 Memristive Neural Networks |
505 8# - FORMATTED CONTENTS NOTE |
Formatted contents note |
1.4.3.1 Crossbar processing: Read1.4.3.2 Crossbar processing: Write; 1.4.3.3 Crossbar processing: Training; 1.5 Looking Forward; References; Chapter 2 -- Crossbar Memory Simulation and Performance Evaluation; 2.1 Introduction; 2.1.1 Motivation; 2.1.2 Contrast with Competing Technologies; 2.1.3 Amorphous Si Crossbar Memory Cell; 2.2 Structure; 2.2.1 Crossbar Modeling; 2.3 Write Strategy and Circuit Implementation; 2.4 Read Strategy and Circuit Implementation; 2.5 Memory Architecture; 2.6 Power Dissipation; 2.6.1 Power Estimation; 2.6.2 Analytical Modeling on Static Power; 2.7 Noise Analysis |
505 8# - FORMATTED CONTENTS NOTE |
Formatted contents note |
2.8 Area Overhead2.8.1 Bank-based System Design; 2.9 Technology Comparison; References; Chapter 3 -- Memristor Digital Memory; 3.1 Introduction; 3.2 Adaptive Reading and Writing in Memristor Memory; 3.3 Simulation Results; 3.3.1 High State Simulation (HSS); 3.3.2 Background Resistance Sweep (BRS); 3.3.3 Minimum Resistance Sweep (MRS); 3.3.4 Diode Leakage Current (DLC); 3.3.5 Power Modeling; 3.4 Adaptive Methods Results and Discussion; 3.5 Chapter Summary; References; Chapter 4 -- Multi-Level Memory Architecture; 4.1 Introduction; 4.2 Multi-State Memory Architecture; 4.2.1 Architecture |
505 8# - FORMATTED CONTENTS NOTE |
Formatted contents note |
4.2.2 Read/Write Circuitry4.2.3 Array Voltage Bias Scheme; 4.2.4 Read/Write Operations Flow; 4.2.5 State Derivations; 4.3 Read/Write Operations; 4.3.1 Read/Write Simulations; 4.3.2 Read Disturbances to the Neighboring Cells; 4.4 Effects of Variations; 4.4.1 Variations in Programming Voltage; 4.4.2 Variations in Series Resistance; 4.4.3 Reduced-Impact Read Scheme; 4.4.4 Resistance Distributions after Array Writes; 4.5 Conclusion; References; Chapter 5 -- Neuromorphic Building Blocks with Memristors; 5.1 Introduction; 5.2 Implementing Neuromorphic Functions with Memristors |
500 ## - GENERAL NOTE |
General note |
5.2.1 Lateral Inhibition |
588 0# - |
-- |
Online resource; title from digital title page (viewed on January 15, 2020). |
520 ## - SUMMARY, ETC. |
Summary, etc |
Nanoscale devices attracted significant research effort from the industry and academia due to their operation principals being based on different physical properties which provide advantages in the design of certain classes of circuits over conventional CMOS transistors. Neuromorphic Circuits for Nanoscale Devices contains recent research papers presented in various international conferences and journals to provide insight into how the operational principles of the nanoscale devices can be utilized for the design of neuromorphic circuits for various applications of non-volatile memory, neural network training/learning, and image processing. The topics discussed in the book include: * Nanoscale Crossbar Memory Design * Q-Learning and Value Iteration using Nanoscale Devices * Image Processing and Computer Vision Applications for Nanoscale Devices * Nanoscale Devices based Cellular Nonlinear/Neural Networks. |
590 ## - LOCAL NOTE (RLIN) |
Local note |
eBooks on EBSCOhost |
Provenance (VM) [OBSOLETE] |
EBSCO eBook Subscription Academic Collection - Worldwide |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Nanoelectromechanical systems. |
9 (RLIN) |
183756 |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Neuromorphics. |
9 (RLIN) |
607064 |
650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Nanosystèmes électromécaniques. |
9 (RLIN) |
1093616 |
650 #6 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Ingénierie neuromorphique. |
9 (RLIN) |
1067423 |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Nanoelectromechanical systems. |
Source of heading or term |
fast |
-- |
(OCoLC)fst01741807 |
9 (RLIN) |
183756 |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name as entry element |
Neuromorphics. |
Source of heading or term |
fast |
-- |
(OCoLC)fst01919429 |
9 (RLIN) |
607064 |
655 #4 - INDEX TERM--GENRE/FORM |
Genre/form data or focus term |
Electronic books. |
700 1# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Yilmaz, Yalcin, |
Relator term |
author. |
9 (RLIN) |
837000 |
700 1# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Ebong, Idongesit, |
Relator term |
author. |
9 (RLIN) |
837001 |
700 1# - ADDED ENTRY--PERSONAL NAME |
Personal name |
Lee, Woo Hyung, |
Relator term |
author. |
9 (RLIN) |
837002 |
776 08 - ADDITIONAL PHYSICAL FORM ENTRY |
Display text |
Print version: |
Main entry heading |
Mazumder, Pinaki. |
Title |
Neuromorphic Circuits for Nanoscale Devices. |
Place, publisher, and date of publication |
Aalborg : River Publishers, ©2019 |
International Standard Book Number |
9788770220606 |
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
Uniform title |
River Publishers series in biomedical engineering. |
9 (RLIN) |
1172900 |
856 40 - ELECTRONIC LOCATION AND ACCESS |
Uniform Resource Identifier |
<a href="https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2277683">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2277683</a> |
938 ## - |
-- |
ProQuest Ebook Central |
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EBLB |
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EBL5963878 |
938 ## - |
-- |
EBSCOhost |
-- |
EBSC |
-- |
2277683 |
994 ## - |
-- |
92 |
-- |
INOPJ |