Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation /
Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation /
edited by Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov adn Mikhail E. Levinshtein.
- 1 online resource (xxiii, 1149 pages .).
- Materials science forum ; v. 740-742 .
- Materials science forum ; v. 740-742. .
Includes bibliographical references and indexes.
The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG.
3038260053 (electronic bk.) 9783038260059 (electronic bk.)
Silicon carbide--Congresses.
Silicon carbide--Electric properties--Congresses.
Silicon-carbide thin films--Congresses.
Couches minces de carbure de silicium--Congrès.
TECHNOLOGY & ENGINEERING--Engineering (General)
TECHNOLOGY & ENGINEERING--Reference.
Silicon carbide.
Silicon carbide--Electric properties.
Silicon-carbide thin films.
Electronic books.
Electronic books.
Conference papers and proceedings.
TA401.3 TK7871.15.S56 / .M3793 v. 740-742
620.193
Includes bibliographical references and indexes.
The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG.
3038260053 (electronic bk.) 9783038260059 (electronic bk.)
Silicon carbide--Congresses.
Silicon carbide--Electric properties--Congresses.
Silicon-carbide thin films--Congresses.
Couches minces de carbure de silicium--Congrès.
TECHNOLOGY & ENGINEERING--Engineering (General)
TECHNOLOGY & ENGINEERING--Reference.
Silicon carbide.
Silicon carbide--Electric properties.
Silicon-carbide thin films.
Electronic books.
Electronic books.
Conference papers and proceedings.
TA401.3 TK7871.15.S56 / .M3793 v. 740-742
620.193